1.

Conference Proceedings
Conference Proceedings
1. INVITED: HYDROGEN ANNEAL OF SILICON WAFER FORMATION OF HIGH QUALITY DEVICE ACTIVE LAYER
Matsushita, Y. ; Sanada, M. ; Tanabe, A. ; Takeda, R. ; Shimaoi, N. ; Kobayashi, K.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.683-697,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
2.

Conference Proceedings
Conference Proceedings
2. Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers
Takeda, R. ; Minami, T. ; Saito, H. ; Hirano, Y. ; Fujimon, H. ; Kashima, K. ; Matsushita, Y.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.331-340,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
3.

Conference Proceedings
Conference Proceedings
3. High Quality Hydrogen-Annealed Wafers
Yoshikawa, J. ; Takeda, R. ; Hayashi, K. ; Shirai, H. ; Matsushita, Y.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.250-261,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13