1.

Conference Proceedings
Conference Proceedings
1. Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
Negoro, Y. ; Katsumoto, K. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.933-936,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
Negoro, Y. ; Katsumoto, K. ; Kimoto, T. ; Matsunami, H. ; Schmid, F. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.913-916,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460