1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)
Kimoto, T. ; Hashimoto, K. ; Fujihira, K. ; Danno, K. ; Nakamura, S. ; Negoro, Y. ; Matsunami, H.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.3-14,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
2.

Conference Proceedings
Conference Proceedings
2. Recent Progress in SiC Epitaxial Growth and Device Processing Technology
Kimoto, T. ; Yano, H. ; Tamura, S. ; Miyamoto, N. ; Fujihira, K. ; Negoro, Y. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.543-548,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356