1.

Conference Proceedings
Conference Proceedings
1. The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Nishino,S. ; Yakimova,R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.147-150,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
Tuominen,M. ; Yakimova,R. ; Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Syvajarvi,M. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.151-154,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. High Growth Rate of α-SiC by Sublimation Epitaxy
Syvajarvi,M. ; Yakimova,R. ; MacMillan,M.F. ; Tuominen,M. ; Kakanakova-Georgieva,A. ; Hemmingsson,C.G. ; Ivanov,I.G. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.143-146,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268