1.

Conference Proceedings
Conference Proceedings
1. An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
J.D. Seo ; J.H. An ; J.G. Kim ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.9-12,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
J.G. Kim ; J.H. An ; J.D. Seo ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.25-28,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
C.K. Park ; G.S. Lee ; J.Y. Lee ; M.O. Kyun ; W.J. Lee ; B.C. Shin ; S. Nishino
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.153-156,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557