1.

Conference Proceedings
Conference Proceedings
1. Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure
M. Matsumoto ; M. Suemitsu ; T. Yara ; N. Setsuo ; U. Tuyoshi
Pub. info.: Thin Film Transistor Technology 8.  pp.119-124,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(8)
2.

Conference Proceedings
Conference Proceedings
2. High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
M. Suemitsu ; S. Sanbonsuge ; E. Saito ; M.H. Jung ; H. Fukidome
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.327-330,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates
H. Handa ; S. Ito ; H. Fukidome ; M. Suemitsu
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.242-245,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
4.

Conference Proceedings
Conference Proceedings
4. Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
E. Saito ; S. Filimonov ; M. Suemitsu
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.147-150,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
5.

Conference Proceedings
Conference Proceedings
5. Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
H. Nagasawa ; R. Gurunathan ; M. Suemitsu
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.108-114,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
6.

Conference Proceedings
Conference Proceedings
6. Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy
M. Suemitsu ; A. Kato ; H. Togashi ; A. Konno ; Y. Yamamoto ; Y. Teraoka ; A. Yoshigoe ; Y. Enta ; Y. Narita
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.311-318,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
7.

Conference Proceedings
Conference Proceedings
7. Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane
A. Konno ; Y. Narita ; T. Itoh ; K. Yasui ; H. Nakzawa ; T. Endoh ; M. Suemitsu
Pub. info.: State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7.  pp.449-456,  2006.  Pennington, N.J.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(5)