1.

Conference Proceedings
Conference Proceedings
1. Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density
J. Kim ; T. Park ; C. Hwang ; S. H. Hong ; M. Seo
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.419-424,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings
Conference Proceedings
2. Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HhO2 Thin Films on Si, Sil-xGex and Ge Substrates
T. Park ; J. Kim ; J. Jang ; M. Seo ; C. Hwang
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.111-120,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
3.

Conference Proceedings
Conference Proceedings
3. The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection
J. Kim ; T. Park ; M. Cho ; M. Seo ; J. Jang ; C. Hwang
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.435-440,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
4.

Conference Proceedings
Conference Proceedings
4. Electrical and Structural Properties of High-K HfO₂ on Si₁₋x Gex Substrates
C. Hwang ; T. Park ; J. Kim ; S. H. Hong ; M. Seo ; J. H. Jang
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.3-8,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant
M. Seo ; S. Kim ; K. Kim ; T. Park ; J. Kim ; C. Hwang ; H. Cho
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.211-218,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)