1.

Conference Proceedings
Conference Proceedings
1. Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-κ Stacks
N. Van der Heyden ; G. Pourtois ; S. De Gendt ; M. Heyns ; A. Stesmans
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.135-143,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.305-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings
Conference Proceedings
3. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide
A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.433-446,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. Evaluation of Nb(Si)N as Metal Gate Material
N. Van Hoornick ; H. De Witte ; T. Hitters ; C. Zhao ; T. Canard ; H. Huatori ; J. Swerts ; T. Schram ; J. Maes ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.495-506,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)