1.

Conference Proceedings
Conference Proceedings
1. Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
M. Das ; S.K. Haney ; C. Jonas ; Q.C. Zhang ; S.H. Ryu
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.667-670,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. 9 kV 4H-SiC IGBTs with 88 mΩ・cm2 of R diff, on
Q.C. Zhang ; C. Jonas ; B. Heath ; M. Das ; S.H. Ryu ; A. Agarwal ; J. Palmour
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.771-774,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557