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12 results

Conference Proceedings

1. First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces

M. Houssa ; G. Pourtois ; F. Bellenger ; M. Caymax ; M. Meuris

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.471-478, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

2. Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide

F. Bellenger ; M. Houssa ; A. Delabie ; T. Conard ; M. Caymax

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.451-459, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

3. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

A. Delabie ; L. Nyns ; F. Bellenger ; M. Caymax ; T. Conard

Pub. info.:	Atomic layer deposition applications 3. pp.227-241, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(7)

Conference Proceedings

4. HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle

L. Nyns ; A. Delabie ; M. Caymax ; M.M. Heyns ; S. Van Elshocht

Pub. info.:	Atomic layer deposition applications 4. pp.257-267, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(4)

Conference Proceedings

5. Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition

F. Bellenger ; C. Merckling ; J. Penaud ; M. Houssa ; M. Caymax

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.411-422, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

6. Screening of High-κ Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition

S. Van Elshocht ; A. Hardy ; C. Adelmann ; M. Caymax ; T. Conard

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.299-310, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

7. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.305-312, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

8. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide

A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.433-446, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

9. Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates

G. Wang ; F.E. Leys ; L. Souriau ; R. Loo ; M. Caymax

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.829-836, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

10.

Conference Proceedings

10. Characterization of Atomic-Beam Deposited GeO₁₋xNx/HfO₂ Stacks on Ge

M. Houssa ; T. Conard ; J. Van Steenbergen ; G. Mavrou ; Y. Panayiotatos ; T. Dimaulas ; M. Meuris ; M. Caymax ; M. Heyns ; G. Nicholas

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.9-16, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

11.

Conference Proceedings

11. CoSi₂/Si_1-xGe_x interfaces for Schottky barrier infrared detectors with extended detection regime

S. Kolodinski ; R.A. Donaton ; E. Roca ; M. Caymax ; K. Maex

Pub. info.:	Growth and characterization of materials for infrared detectors II : 13-14 July, 1995, San Diego, California. pp.175-184, 1995. Bellingham, WA. Society of Photo-optical Instrumentation Engineers
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2554

12.

Conference Proceedings

12. A Step Towards a Better Understanding of Silicon Passivated (100)Ge p- Channel Devices

G. Pourtois ; M Houssa ; B. De Jaeger ; F. Leys ; B. Kaczer ; K. Martens ; M. Caymax ; M. Meuris ; G. Groeseneken ; M. Heyns

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment. pp.53-64, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(1)

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Author: M. Caymax