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Conference Proceedings

1. First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces

M. Houssa ; G. Pourtois ; F. Bellenger ; M. Caymax ; M. Meuris

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.471-478, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

2. Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide

F. Bellenger ; M. Houssa ; A. Delabie ; T. Conard ; M. Caymax

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.451-459, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

3. Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition

F. Bellenger ; C. Merckling ; J. Penaud ; M. Houssa ; M. Caymax

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.411-422, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

4. Characterization of Atomic-Beam Deposited GeO₁₋xNx/HfO₂ Stacks on Ge

M. Houssa ; T. Conard ; J. Van Steenbergen ; G. Mavrou ; Y. Panayiotatos ; T. Dimaulas ; M. Meuris ; M. Caymax ; M. Heyns ; G. Nicholas

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.9-16, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)