1.

Conference Proceedings
Conference Proceedings
1. First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces
M. Houssa ; G. Pourtois ; F. Bellenger ; M. Caymax ; M. Meuris
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.471-478,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. A Step Towards a Better Understanding of Silicon Passivated (100)Ge p- Channel Devices
G. Pourtois ; M Houssa ; B. De Jaeger ; F. Leys ; B. Kaczer ; K. Martens ; M. Caymax ; M. Meuris ; G. Groeseneken ; M. Heyns
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.53-64,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)