1.

Conference Proceedings
Conference Proceedings
1. INVITED: A NEW JUNCTION TECHNOLOGY BASED ON SELECTIVE CVD OF SiGe ALLOYS FOR CMOS TECHNOLOGY NODES BEYOND 30 nm
Oztiirk, M.C. ; Pesovic, N. ; Liu, J. ; Mo, H. ; Kang, I. ; Gannavaram, S.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.761-773,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. INVITED: A NEW JUNCTION TECHNOLOGY BASED ON SELECTIVE CVD OF SiGe ALLOYS FOR CMOS TECHNOLOGY NODES BEYOND 30 nm
Oztiirk, M.C. ; Pesovic, N. ; Liu, J. ; Mo, H. ; Kang, I. ; Gannavaram, S.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.761-773,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. Selective Silicon-Germanium Source/Drain Technology For Nanoscale CMOS
Ozturk, M.C. ; Pesovic, N. ; Liu, J. ; Mo, H. ; Kang, I. ; Gannavaram, S.
Pub. info.: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.143-154,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 717