1.

Conference Proceedings
Conference Proceedings
1. Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon
Jones, K.S. ; Liu, J. ; Zhang, L.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.116-126,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
2.

Conference Proceedings
Conference Proceedings
2. Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe
Crosby, R.T. ; Jones, K.S. ; Law, M.E. ; Saavedra, A.F. ; Hansen, J.L. ; Larsen, A.N. ; Liu, J.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.183-188,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
3.

Conference Proceedings
Conference Proceedings
3. BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2
Crosby, R.T. ; Radic, L. ; Jones, K.S. ; Law, M.E. ; Thompson, P.E. ; Liu, J. ; Klimov, M. ; Craciun, V.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.313-318,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810