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13 results

Conference Proceedings

1. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1345-1348, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Li, X. ; Luo, Y. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1333-1336, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Zhao, J.H. ; Li, X. ; Tone, K. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1223-1226, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. 1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Fursin, L. ; Li, X. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1157-1160, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

5. A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

Zhao, J.H. ; Zhang, J. ; Alexandrov, P. ; Li, X. ; Burke, T.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1173-1176, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Li, X. ; Luo, Y. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1333-1336, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1345-1348, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs

Zhao, J.H. ; Tone, K. ; Li, X. ; Alexandrov, P. ; Fursin, L. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1213-1216, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications

Zhao, J.H. ; Zhang, J. ; Luo, Y. ; Hu, X. ; Li, Y. ; Yu, H. ; Lai, J. ; Alexandrov, P. ; Fursin, L. ; Li, X. ; Carter, J. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1137-1140, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. 4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET

Zhao, J.H. ; Fursin, L. ; Alexandrov, P. ; Li, X. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1161-1164, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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