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13 results

Conference Proceedings

1. Identification of Deep Level Defects in SiC Bipolar Junction Transistors

Lenahan, P.M. ; Pfeiffenberger, N.T. ; Pribicko, T.G. ; Lelis, A.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.567-570, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Nonintrusive nondestructive method to detect fissile material

Jayaraman, S. ; Tittmann, B.R. ; Shull, P.J. ; Maillis, G. ; Lenahan, P.M. ; Ze, F.

Pub. info.:	Nondestructive detection and measurement for homeland security II : 16-17 March 2004, San Deigo, California, USA. pp.8-14, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5395

Conference Proceedings

3. Thapping Centers in Borophosphosilicate and Phosphosilicate Thin Films on Silicon

Lenahan, P.M. ; Billman, C.A. ; Fuller, R. ; Lowry, R.K. ; Evans, H.

Pub. info.:	Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.46-54, 1997. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-10

Conference Proceedings

4. The Connection Between oxide leakage currents and Si/SIO2 Interface Trap Generation

Lenahan, P.M.

Pub. info.:	Silicon Nitride and Silicon Dioxide Thin Insulating Films : proceedings of the sixth International Symposium. pp.74-79, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-7

Conference Proceedings

5. Point Defect Structure And Behavior As A Function Of Processing Parameters And P.M. Lenahan Composition In Silicon Oxynitride Films

Yount, J.T. ; Lenahan, P.M.

Pub. info.:	Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.73-82, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-16

Conference Proceedings

6. A Physically Based Predictive Model of Charge Trapping in Gate Oxides

Lenahan, P.M. ; Conley, J.F. ; Wallace, B.D.

Pub. info.:	Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.275-284, 1997. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-10

Conference Proceedings

7. Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Chan-nel MOSFETs

Billman, C.A. ; Lenahan, P.M. ; Weber, W.

Pub. info.:	Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.134-142, 1997. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-10

Conference Proceedings

8. ELECTRICAL PROPERTIES OF METAL-OXIDE-SILICON STRUCTURES WITH SOL-GEL OXIDES

Warren, W.L. ; Lenahan, P.M. ; Brinker, C.J.

Pub. info.:	Better ceramics through chemistry III : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.. pp.803-810, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	121

Conference Proceedings

9. ELECTRON SPIN RESONANCE STUDIES OF SILICON DIOXIDE FILMS ON SILICON IN INTEGRATED CIRCUITS USING SPIN DEPENDENT RECOMBINATION

Jupina, M.A. ; Lenahan, P.M.

Pub. info.:	Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.. pp.191-196, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	159

10.

Conference Proceedings

10. Oxide Leakage Currents and Oxygen Deficient Silicon

Lenahan, P.M. ; Mele, J. ; Fattu, M. ; Lowry, R.K. ; Woodbury, D.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium. pp.50-56, 1999. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-6

11.

Conference Proceedings

11. Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M.S. ; Lenahan, P.M. ; Lelis, A.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1011-1014, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

12.

Conference Proceedings

12. Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

Lenahan, P.M. ; Kang, A.Y. ; Campbell, J.P.

Pub. info.:	Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001). VOL-1 pp.608-615, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4746

13.

Conference Proceedings

13. Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D.J. ; Bohna, N.A. ; Lenahan, P.M. ; Lelis, A.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.477-480, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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Author: Lenahan, P.M.