1.

Conference Proceedings
Conference Proceedings
1. 39 MOSFET channel engineering using strained Si, SiGe and Ge channels
Fitzgerald, E.A. ; Lee, M.L. ; Leitz, C.W. ; Antoniadis, D.A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.315-324,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives
Taraschi, G. ; Cheng, Z.-Y. ; Currie, M.T. ; Leitz, C.W. ; Langdo, T.A. ; Lee, M.L. ; Pitera, A. ; Fitzgerald, E.A. ; Antoniadis, D.A. ; Hoyt, J.L.
Pub. info.: Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium.  pp.27-32,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-3
3.

Conference Proceedings
Conference Proceedings
3. Study of Ge Out-Diffusion During Nickel (Platinum 〜 0, 5, 10 at.%) Germanosilicide Formation
Jin, L.J. ; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A. ; Antoniadis, D.A. ; Pitera, A.J. ; Lee, M.L. ; Chi, D.Z.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.141-146,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810