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Conference Proceedings

1. 15 kV IGBTs in 4H-SiC

S.H. Ryu ; C. Capell ; C. Jonas ; M. O'Loughlin ; L. Cheng

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.954-957, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Development of 15 kV 4H-SiC IGBTs

S.H. Ryu ; L. Cheng ; S. Dhar ; C. Capell ; C. Jonas

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1135-1138, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications

S.H. Ryu ; L. Cheng ; S. Dhar ; C. Capell ; C. Jonas

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1059-1064, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720