1.

Conference Proceedings
Conference Proceedings
1. 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
L. Cheng ; A.K. Agarwal ; M. O'Loughlin ; C. Capell ; K. Lam
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.895-898,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
L. Cheng ; A.K. Agarwal ; C. Capell ; M. O'Loughlin ; K. Lam
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.978-981,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. High-Mobility SiC MOSFETs with Chemically Modified Interfaces
D.J. Lichtenwalner ; L. Cheng ; S. Dhar ; A.K. Agarwal ; S. Allen
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.749-752,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
L. Cheng ; S.H. Ryu ; A.K. Agarwal ; M.J. O'Loughlin ; A.A. Burk
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1065-1068,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. 12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination
Q.J. Zhang ; A.K. Agarwal ; C. Capell ; L. Cheng ; M.J. O'Loughlin
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1151-1154,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
L. Cheng ; J.W. Palmour ; A.K. Agarwal ; S.T. Allen ; E.V. Brunt
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1089-1095,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
7.

Conference Proceedings
Conference Proceedings
7. Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
S. Rumyantsev ; M. Levinshtein ; M. Shur ; L. Cheng ; A.K. Agarwal
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1021-1024,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780