1.

Conference Proceedings
Conference Proceedings
1. In-situ Rapid Thermal N20 Oxidation of NH3-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation
Kim, Y.H. ; Song, S.C. ; Luan, H.F. ; Gelpey, J.C. ; Kepton, A. ; Levy, S. ; Bloom, R. ; Kwong, D.-L.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.239-246,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
2.

Conference Proceedings
Conference Proceedings
2. Ultrathin (EOT < 7A) Ta2O5 Gate Stacks Prepared by an In-Situ RT-MOCVD Process
Lee, S.J. ; Luan, H.F. ; Lee, C.H ; Senzoki, Y ; Roberts, D. ; Kwong, D.-L.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.263-270,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
3.

Conference Proceedings
Conference Proceedings
3. Electrical and Chemical Properties of Ultrathin RT-MOCVD Grown Ti-Doped Ta2O5
Lee, S.J. ; Luan, H.F. ; Mao, A. ; Jeon, T.S. ; Lee, C.H. ; Vrtis, R. ; Roberts, D. ; Kwong, D.-L.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.283-290,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9