1.

Conference Proceedings
Conference Proceedings
1. Current-voltage characteristics of ungated AlGaN/GaN heterostructures
Albrecht, J. D. ; Ruden, P. P. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.489-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. Correlation of drain current pulsed response with microwave power output in AlGaN/GaN HEMTs
Binari, S. C. ; Ikossi-Anastasiou, K. ; Kruppa, W. ; Dietrich, H. B. ; Kelner, G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.541-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
3.

Conference Proceedings
Conference Proceedings
3. Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors
Ruden, P. P. ; Albrecht, J. D. ; Sutandi, A. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.35.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537