1.

Conference Proceedings
Conference Proceedings
1. Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111)
Gherasoiu, I. ; Nikishin, S. ; Kipshidze, G. ; Borisov, B. ; Chandolu, A. ; Holtz, M. ; Temkin, H.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.227-232,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
2.

Conference Proceedings
Conference Proceedings
2. Gas Source Molecular Beam Epitaxy of High Quality AlGaN on Si and Sapphire
Nikishin, S. ; Kipshidze, G. ; Kuryatkov, V. ; Zubrilov, A. ; Choi, K. ; Gherasoiu, Iu. ; Peralta, L. Grave de ; Prokofyeva, T. ; Holtz, M. ; Asomoza, R. ; Kudryavtsev, Yu. ; Temkin, H.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices
Holtz, M. ; Kipshidze, G. ; Chandolu, A. ; Yun, J. ; Borisov, B. ; Kuryatkov, V. ; Zhu, K. ; Chu, S.N.G. ; Nikishin, S.A. ; Temkin, H.
Pub. info.: Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A..  pp.621-626,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 744