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Conference Proceedings

1. Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas

H. Habuka ; K. Furukawa ; K. Tanaka ; Y. Katsumi ; S. Iizuka

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.286-289, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

2. 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

H. Habuka ; Y. Katsumi ; Y. Miura ; K. Tanaka ; Y. Fukai

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.655-658, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

3. 4H-SiC Surface Morphology Etched Using ClF₃ Gas

H. Habuka ; K. Tanaka ; Y. Katsumi ; N. Takechi ; K. Fukae

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.787-790, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

4. Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas

Y. Miura ; Y. Katsumi ; K. Tanaka ; S. Oda ; H. Habuka

Pub. info.:	State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications. pp.39-52, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(3)