1.

Conference Proceedings
Conference Proceedings
1. Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
S.Y. Ji ; K. Kojima ; R. Kosugi ; S. Saito ; Y. Sakuma
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.181-184,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
K. Mochizuki ; S.Y. Ji ; R. Kosugi ; K. Kojima ; Y. Yonezawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.47-50,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897