1.

Conference Proceedings
Conference Proceedings
1. Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
K. Kawahara ; H. Watanabe ; N. Miura ; S. Nakata ; S. Yamakawa
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.403-406,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
K. Ebihara ; K. Kawahara ; H. Watanabe ; S. Nakata ; S. Yamakawa
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.467-470,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897