1.

Conference Proceedings
Conference Proceedings
1. Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
T. Hori ; K. Danno ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.129-132,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Growth and Electrical Characterization of 4H-SiC Epilayers
T. Kimoto ; K. Danno ; T. Hori ; H. Matsunami
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.35-40,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000°C
Y.Z. Yao ; Y. Ishikawa ; K. Sato ; Y. Sugawara ; K. Danno
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.829-832,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
K. Danno ; S. Yamaguchi ; H. Kimoto ; K. Sato ; T. Bessho
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.19-22,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato ; K. Danno
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.389-392,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Diffusion and Gettering of Transition Metals in 4H-SiC
K. Danno ; H. Saitoh ; A. Seki ; T. Shirai ; H. Suzuki
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.225-228,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
Y. Sugawara ; Y. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.11-14,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
8.

Conference Proceedings
Conference Proceedings
8. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
Y. Ishikawa ; Y.Z. Yao ; Y. Sugawara ; K. Danno ; H. Suzuki
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.367-370,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.290-293,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching
Y.Z. Yao ; Y. Sugawara ; Y. Ishikawa ; H. Saitoh ; K. Danno
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.294-297,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
11.

Conference Proceedings
Conference Proceedings
11. Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation
Y.Z. Yao ; Y. Sugawara ; Y. Ishikawa ; K. Danno ; H. Suzuki
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.45-48,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
12.

Conference Proceedings
Conference Proceedings
12. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
S.A. Reshanov ; G. Pensl ; K. Danno ; T. Kimoto ; S. Hishiki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.417-420,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
13.

Conference Proceedings
Conference Proceedings
13. Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
F. Yan ; R.P. Devaty ; W.J. Choyke ; K. Danno ; G. Alfieri
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.419-422,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
14.

Conference Proceedings
Conference Proceedings
14. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
S.A. Reshanov ; S. Beljakowa ; B. Zippelius ; G. Pensl ; K. Danno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.423-426,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
15.

Conference Proceedings
Conference Proceedings
15. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
K. Danno ; H. Saitoh ; A. Seki ; H. Daikoku ; Y. Fujiwara
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.13-16,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
16.

Conference Proceedings
Conference Proceedings
16. Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
T. Shirai ; K. Danno ; A. Seki ; H. Sakamoto ; T. Bessho
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.75-78,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
17.

Conference Proceedings
Conference Proceedings
17. Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
K. Danno ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.331-334,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
18.

Conference Proceedings
Conference Proceedings
18. Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno ; Y. Kawai
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.351-354,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
19.

Conference Proceedings
Conference Proceedings
19. Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato ; K. Danno
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.346-349,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
20.

Conference Proceedings
Conference Proceedings
20. Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
Y. Sugawara ; Y.Z. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.366-369,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780