1.

Conference Proceedings
Conference Proceedings
1. The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon
Robertson, L.S. ; Brindos, R. ; Jones, K. S. ; Law, Mark E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B5.8-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
2.

Conference Proceedings
Conference Proceedings
2. A STUDY OF LOOP EVOLUTION DURING INERT AMBIENT ANNEALING AND REACTION BETWEEN POINT DEFECTS AND DISLOCATION LOOPS DURING OXIDATION OF SILICON
Liu, J. ; Jones, K. S.
Pub. info.: Beam-solid interactions for materials synthesis and characterization : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A..  pp.293-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 354
3.

Conference Proceedings
Conference Proceedings
3. Type II Dislocation Loops and Their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction
Thompson, R. H., Jr. ; Krishnamoorthy, V. ; Liu, J. ; Jones, K. S.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.635-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
4.

Conference Proceedings
Conference Proceedings
4. Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants
Liu, J. ; Jones, K. S. ; Downey, D. F. ; Mehta, S.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.9-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
5.

Conference Proceedings
Conference Proceedings
5. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.2-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610