1.

Conference Proceedings
Conference Proceedings
1. Surface State Characterization Methods for Si02 on 4H-SiC
LaRoche, I.R. ; Kim, J. ; Johnson, J.W. ; Luo, B. ; Kang, B.S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S.I. ; Chung, G. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.282-291,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
2.

Conference Proceedings
Conference Proceedings
2. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693