1.

Conference Proceedings
Conference Proceedings
1. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE
Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.303-306,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. Shallow P Donors in 3C-, 4H- and 6H-SiC
Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.593-596,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Photoluminescence of Phosphorus Doped SiC
Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.589-592,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Ivanov, I.G. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.601-604,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.461-464,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor
Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.101-104,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.61-66,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
Son, N. T. ; Henry, A. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.515-518,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
Syrkin, A. ; Dmitriev, V. ; Yakimova, R. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1173-1176,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Sarney, W. ; Chang, H.-R. ; Storasta, L. ; Jacobson, H. ; Reitmeier, Z.J. ; Wagner, B.P. ; Janzen, E. ; Davis, R.F.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.53-58,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
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Conference Proceedings
Conference Proceedings
11. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
12.

Conference Proceedings
Conference Proceedings
12. High Growth Rate Epitaxy of Thick 4H-SiC Layers
Syvajarvi, M. ; Yakimova, R. ; Jacobsson, H. ; Linnarsson, M. K. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.165-168,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
13.

Conference Proceedings
Conference Proceedings
13. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
14.

Conference Proceedings
Conference Proceedings
14. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
15.

Conference Proceedings
Conference Proceedings
15. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
16.

Conference Proceedings
Conference Proceedings
16. Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
Forsberg, U. ; Henry, A. ; Linnarsson, M. K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.619-622,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
17.

Conference Proceedings
Conference Proceedings
17. Metastability of a Hydrogen-Related Defect in 6H-SiC
Henry, A. ; Egilsson, T. ; Ivanov, I. G. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.651-654,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
18.

Conference Proceedings
Conference Proceedings
18. Pseudo-Donors in SiC
Egilsson, T. ; Ivanov, I. G. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.647-650,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
19.

Conference Proceedings
Conference Proceedings
19. Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
Yakimova, R. ; Syvajarvi, M. ; Rendakova, S. ; Dmitriev, V. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.237-240,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
20.

Conference Proceedings
Conference Proceedings
20. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, O. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Danielsson, O. ; Jonsson, S. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.219-222,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.191-194,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Henry, A. ; Ellison, A. ; Forsberg, U. ; Magnusson, B. ; Pozina, G. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.593-596,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
24.

Conference Proceedings
Conference Proceedings
24. Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
Storasta, L. ; Henry, A. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.469-472,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
25.

Conference Proceedings
Conference Proceedings
25. Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Nakagomi, S. ; Shinobu, H. ; Uneus, L. ; Lundstrom, I. ; Ekedahl, L.-G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Spetz, A. L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1423-1426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Presence of Hydrogen in SiC
Henry, A. ; Magnusson, B. ; Linnarsson, M.K. ; Ellison, A. ; Syvaejaervi, M. ; Yakimova, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.373-376,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
27.

Conference Proceedings
Conference Proceedings
27. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A. L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1419-1422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Sridhara, S.G. ; Carlsson, F.H.C. ; Bergman, J.P. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.377-380,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
29.

Conference Proceedings
Conference Proceedings
29. Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiC
Henry, A. ; Janson, M.S. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.549-554,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
30.

Conference Proceedings
Conference Proceedings
30. Doping-Related Strain in n-Doped 4H-SiC Crystals
Jacobson, H. ; Birch, J. ; Lindefelt, U. ; Hallin, C. ; Henry, A. ; Yakimova, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.269-272,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
31.

Conference Proceedings
Conference Proceedings
31. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, OE. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Storasta, L. ; Magnusson, B. ; Henry, A. ; Linnarsson, M.K. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.423-426,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
33.

Conference Proceedings
Conference Proceedings
33. Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Danielsson, OE. ; Joensson, S. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.219-222,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.191-194,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Nitrogen Delta Doping in 4H-SiC Epilayers
Henry, A. ; Storasta, L. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.153-156,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
36.

Conference Proceedings
Conference Proceedings
36. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvajarvi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1419-1422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Nakagomi, S. ; Shinobu, H. ; Uneus, L. ; Lundstrom, I. ; Ekedahl, L.-G. ; Yakimova, R. ; Syvajarvi, M. ; Henry, A. ; Janzen, E. ; Spetz, A.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1423-1426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
Syrkin, A. ; Dmitriev, V. ; Yakimova, R. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1173-1176,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Henry, A. ; Ellison, A. ; Forsberg, U. ; Magnusson, B. ; Pozina, G. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.593-596,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
Zhang, J. ; Ellison, A. ; Danielsson, Oe. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.91-94,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
41.

Conference Proceedings
Conference Proceedings
41. Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
Danielsson, Oe. ; Forsberg, U. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.99-102,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
42.

Conference Proceedings
Conference Proceedings
42. Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Storasta, L. ; Jacobson, H. ; Wagner, B.P. ; Reitmeier, Z.J. ; Janzen, E. ; Davis, R.F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.221-224,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
43.

Conference Proceedings
Conference Proceedings
43. A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
Eriksson, J. ; Rorsman, N. ; Zirath, H. ; Henry, A. ; Magnusson, B. ; Ellison, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.737-740,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
44.

Conference Proceedings
Conference Proceedings
44. Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Sundqvist, B. ; Ellison, A. ; Jonsson, A. ; Henry, A. ; Hallin, C. ; Bergman, J.P. ; Magnusson, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.21-24,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436