1.

Conference Proceedings
Conference Proceedings
1. Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
V. Pala ; E. van Brunt ; B. Hull ; S. Allen ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.970-973,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
D.J. Lichtenwalner ; V. Pala ; B. Hull ; S. Allen ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.671-676,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
D.J. Lichtenwalner ; J.H. Dycus ; W.Z. Xu ; J.M. Lebeau ; B. Hull ; S. Allen ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.163-166,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
4.

Conference Proceedings
Conference Proceedings
4. Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
S.H. Ryu ; D.J. Lichtenwalner ; E. van Brunt ; C. Capell ; M.J. O'Loughlin ; C. Jonas ; Y. Lemma ; J. Zhang ; J. Richmond ; A.A. Burk ; B. Hull ; H. O'Brien ; A. Ogunniyi ; A.J. Lelis ; J. Casady ; D. Grider ; S. Allen ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.587-590,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
Q.J. Zhang ; G. Wang ; C. Jonas ; C. Capell ; S. Pickle ; P. Butler ; D.J. Lichtenwalner ; E. van Brunt ; S.H. Ryu ; J. Richmond ; B. Hull ; J. Casady ; S. Allen ; J.W. Palmour ; J.Q. Zhang
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.521-524,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897