1.

Conference Proceedings
Conference Proceedings
1. Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
O.Y. Goue ; Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.297-300,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; Y. Yang ; J.Q. Guo ; B. Raghothamachar
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.85-89,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley ; G. Chung ; E. Sanchez ; I. Manning
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.209-213,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897