1.

Conference Proceedings
Conference Proceedings
1. Highly-Strained Silicon-On-Insulator Development
T. Akatsu ; J. Hartmann ; C. Aulnette ; Y. Le Vaillant ; D. Rouchon
Pub. info.: Semiconductor wafer bonding 9 : science, technology, and applications.  pp.107-117,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(6)
2.

Conference Proceedings
Conference Proceedings
2. Svalex 2005 and Icesar 2007 - Two Flight Campaigns over Sea and Land Ice in the Svalbard Region: Sea Ice Studies
W. Dierking ; J. Hartmann ; C. Luepkes
Pub. info.: Proceedings of Envisat Symposium 2007, 23-27 April 2007, Montreux, Switzerland.  2  2007.  Noordwijk, The Netherlands.  ESA Communication Production Office
Title of ser.: ESA SP
Ser. no.: 636
3.

Conference Proceedings
Conference Proceedings
3. Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features
T.P. Ernst ; F. Andrieu ; O. Weber ; J. Hartmann ; C. Dupre
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.947-961,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
4.

Conference Proceedings
Conference Proceedings
4. Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices
V. Carron ; M. Ribeiro ; P. Besson ; G. Rolland ; J. Hartmann
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.643-654,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
5.

Conference Proceedings
Conference Proceedings
5. In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains
J. Hartmann ; A. Papon ; J.M. Fabbri ; G. Rolland ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.489-500,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
6.

Conference Proceedings
Conference Proceedings
6. Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes
F. Gonzatti ; J. Hartmann ; K. Yckache
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.485-493,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
7.

Conference Proceedings
Conference Proceedings
7. HCl Selective Etching of Si1-xGex versus Si for Silicon On Nothing and Multi Gate Devices
V. Destefanis ; J. Hartmann ; F. Hüe ; D. Bensahel
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.427-438,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
8.

Conference Proceedings
Conference Proceedings
8. Comparison Between Three Si1-xGex versus Si Selective Etching Processes
T. Salvetat ; V. Destefanis ; S. Borel ; J. Hartmann ; O. Kermarrec
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.439-449,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
9.

Conference Proceedings
Conference Proceedings
9. Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates
J. Hartmann ; A. Abbadie ; D. Rouchon ; Y. Guinche ; P. Holliger
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.309-311,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
10.

Conference Proceedings
Conference Proceedings
10. High Available COTS Based Computer for Space
J. Hartmann ; G. Magistrati
Pub. info.: Proceedings of DASIA 2015 : DAta Systems In Aerospace : 19-21 May 2015 Barcelona, Spain.  2015.  Noordwijk.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 732
11.

Conference Proceedings
Conference Proceedings
11. Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)
J. Hartmann ; L. Baud ; G. Rolland ; J.M. Fabbri ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.219-229,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
12.

Conference Proceedings
Conference Proceedings
12. UV and Visible Raman Spectroscopy Applied to sSi/Si1-xGex and sSOI Stacks
D. Rouchon ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.181-188,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
13.

Conference Proceedings
Conference Proceedings
13. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study
D. Rouchon ; V. Destefanis ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.203-214,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
14.

Conference Proceedings
Conference Proceedings
14. Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Sil-yCy Channels
F. Ducroquet ; J. Hartmann ; C. Tabone ; D. Lafond ; C. Vizioz ; T. P. Ernst ; S. Deleonibus
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.333-342,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
15.

Conference Proceedings
Conference Proceedings
15. Epitaxial Growth of Ge Thick Layers on Nominal and 6oC off Si(001); Ge Surface Passivation by Si
J. Hartmann ; H. Grampeix ; L. Clavelier
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.583-590,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
16.

Conference Proceedings
Conference Proceedings
16. Comparison of Different Etching Techniques in Order to Reveal Dislocations in Thick Ge Layers
A. Abbadie ; J. Hartmann ; C. Deguel ; L. Sanchez ; F. Brunier ; F. Letertre
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.263-270,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
17.

Conference Proceedings
Conference Proceedings
17. Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)
J. Hartmann ; D. Rouchon ; J. Barnes ; M. Mermoux ; T. Billon
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.251-256,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
18.

Conference Proceedings
Conference Proceedings
18. High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films
C. Dupre ; P. Fazzini ; T. Ernst ; F. Cristiano ; J. Hartmann ; A. Claverie ; F. Andrieu ; O. Faynot ; P. Rivallin ; F. Laugier ; G. Ghibaudo ; S. Cristoloveanu ; S. Deleonibus
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.33-38,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
19.

Conference Proceedings
Conference Proceedings
19. Growth Kinetics and Boron-Doping of Vety High Ge Content Si₁₋xGex for Sources and Drains Engineering
J. Hartmann ; F. Gonzatti ; J. Barnes ; F. Fillot ; T. Billon
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.397-400,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
20.

Conference Proceedings
Conference Proceedings
20. Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers
J. Hartmann ; A. Papon ; J. Colonna ; T. Ernst ; T. Billon
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.341-351,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)