1.

Conference Proceedings
Conference Proceedings
1. HCl Selective Etching of Si1-xGex versus Si for Silicon On Nothing and Multi Gate Devices
V. Destefanis ; J. Hartmann ; F. Hüe ; D. Bensahel
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.427-438,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
2.

Conference Proceedings
Conference Proceedings
2. Comparison Between Three Si1-xGex versus Si Selective Etching Processes
T. Salvetat ; V. Destefanis ; S. Borel ; J. Hartmann ; O. Kermarrec
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.439-449,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
3.

Conference Proceedings
Conference Proceedings
3. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study
D. Rouchon ; V. Destefanis ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.203-214,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)