1.

Conference Proceedings
Conference Proceedings
1. In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains
J. Hartmann ; A. Papon ; J.M. Fabbri ; G. Rolland ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.489-500,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)
J. Hartmann ; L. Baud ; G. Rolland ; J.M. Fabbri ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.219-229,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)
J. Hartmann ; D. Rouchon ; J. Barnes ; M. Mermoux ; T. Billon
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.251-256,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
4.

Conference Proceedings
Conference Proceedings
4. Growth Kinetics and Boron-Doping of Vety High Ge Content Si₁₋xGex for Sources and Drains Engineering
J. Hartmann ; F. Gonzatti ; J. Barnes ; F. Fillot ; T. Billon
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.397-400,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
5.

Conference Proceedings
Conference Proceedings
5. Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers
J. Hartmann ; A. Papon ; J. Colonna ; T. Ernst ; T. Billon
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.341-351,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)