1.

Conference Proceedings
Conference Proceedings
1. Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices
V. Carron ; M. Ribeiro ; P. Besson ; G. Rolland ; J. Hartmann
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.643-654,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains
J. Hartmann ; A. Papon ; J.M. Fabbri ; G. Rolland ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.489-500,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)
J. Hartmann ; L. Baud ; G. Rolland ; J.M. Fabbri ; T. Billon
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.219-229,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)