1.

Conference Proceedings
Conference Proceedings
1. Highly-Strained Silicon-On-Insulator Development
T. Akatsu ; J. Hartmann ; C. Aulnette ; Y. Le Vaillant ; D. Rouchon
Pub. info.: Semiconductor wafer bonding 9 : science, technology, and applications.  pp.107-117,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(6)
2.

Conference Proceedings
Conference Proceedings
2. Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates
J. Hartmann ; A. Abbadie ; D. Rouchon ; Y. Guinche ; P. Holliger
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.309-311,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. UV and Visible Raman Spectroscopy Applied to sSi/Si1-xGex and sSOI Stacks
D. Rouchon ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.181-188,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study
D. Rouchon ; V. Destefanis ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.203-214,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)
J. Hartmann ; D. Rouchon ; J. Barnes ; M. Mermoux ; T. Billon
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.251-256,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)