1.

Conference Proceedings
Conference Proceedings
1. Current Status of SIMOX Technolgoy - High-Quality ITOX-SIMOX Wafers and their Application to Quarter-Micron CMOS LSIs
Izumi, K.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.221-234,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
2. Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Nakao, M. ; likawa, H. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.373-378,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Tsuehida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Izumi, K. ; Nakayama, K. ; Ishii, R. ; Asano, K. ; Sugawara, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.97-100,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Izumi, S. ; Tsuchida, H. ; Tawara, T. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.323-326,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. *FORMATION OF BURIED OXIDE IN SILICON BY HIGH-DOSE OXYGEN IMPLANTATION, AND APPLICATION OF THIS TECHNOLOGY TO CMOS DEVICES
Izumi, K. ; Omura, Y. ; Nakashima, S.
Pub. info.: Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.443-452,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 23
6.

Conference Proceedings
Conference Proceedings
6. Structure of Thermally Grown SiO2 on Crystalline 6H-SiC
Tsuchida, H. ; Kamata, I. ; Izumi, K.
Pub. info.: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.273-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 446
7.

Conference Proceedings
Conference Proceedings
7. A Comparative Study of Mechanical Properties in Ion-Irradiated Al2O3 and MgO｡ｦnAl2O3
Yasuda, K. ; Kinoshita, C. ; Izumi, K.
Pub. info.: Microstructural processes in irradiated materials : symposium held November 30-December 2, 1998, Boston, Massachusetts, U.S.A..  pp.317-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 540
8.

Conference Proceedings
Conference Proceedings
8. In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
Jikimoto, T. ; Tsuchida, H. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.709-712,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
Kamata, I. ; Tsuchida, H. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1137-1140,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Development of SIC substrate with buried oxide layer for electron-photon merged devices
Nakao, M. ; Hirai, S. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.93-98,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
13.

Conference Proceedings
Conference Proceedings
13. Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for l6O+-implanted Si wafers
likawa, H. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.87-92,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
14.

Conference Proceedings
Conference Proceedings
14. Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Jikimoto, T. ; Miyanagi, T. ; Nakamura, T. ; Izumi, K.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.35-46,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
15.

Conference Proceedings
Conference Proceedings
15. Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
Nakamura, T. ; Miyanagi, T. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.721-724,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.145-148,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
17.

Conference Proceedings
Conference Proceedings
17. Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor
Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
18.

Conference Proceedings
Conference Proceedings
18. Challenge to 200 mm 3C-SiC Wafers Using SOI
Nakao, M. ; Iikawa, H. ; Izumi, K. ; Yokoyama, T. ; Kobayashi, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.205-208,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
19.

Conference Proceedings
Conference Proceedings
19. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
Tawara, T. ; Tsuchida, H. ; Izumi, S. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.565-568,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
Kamata, I. ; Tsuchida, H. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.311-314,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
21.

Conference Proceedings
Conference Proceedings
21. Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.171-174,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Introductory Remarks
Izumi, K.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.3-4,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
23.

Conference Proceedings
Conference Proceedings
23. Performance of YSZ-Supported Anode for SOFC Substrates
Nakamura, A. ; Yokota, S. ; Shimizu, Y. ; Itoh, H. ; Yamamoro, T. ; Izumi, K.
Pub. info.: Solid oxide fuel cells VIII (SOFC VIII) : proceedings of the international symposium.  pp.662-669,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-7
24.

Conference Proceedings
Conference Proceedings
24. Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
Hirai, S. ; Jobe, F. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.347-350,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Reaction of Meat Constituents with Nitrite
Cassens, R. G. ; Izumi, K. ; Lee, M. ; Greaser, M. L. ; Lozano, J.
Pub. info.: N-nitroso compounds.  pp.289-,  1981.  Washington, D.C..  American Chemical Society
Title of ser.: ACS symposium series
Ser. no.: 174
26.

Conference Proceedings
Conference Proceedings
26. Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
Tsuchida, H. ; Tsuji, T. ; Kamata, I. ; Jikimoto, T. ; Fujisawa, H. ; Ogino, S. ; Izumi, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.131-134,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
27.

Conference Proceedings
Conference Proceedings
27. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. Dependence of Micropipe Dissociation on Surface Orientation
Kamata, I. ; Tsuchida, H. ; Izumi, S. ; Tawara, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.379-382,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
29.

Conference Proceedings
Conference Proceedings
29. Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.171-174,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. 4H-SiC Epitaxial Growth for High-Power Devices
Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Miyanagi, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.131-136,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
31.

Conference Proceedings
Conference Proceedings
31. Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Kamata, I. ; Tsuchida, H. ; Jikimoto, T. ; Miyanagi, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.261-264,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
32.

Conference Proceedings
Conference Proceedings
32. Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
Hirai, S. ; Jobe, F. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.347-350,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
Kamata, I. ; Tsuchida, H. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1137-1140,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.229-232,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
36.

Conference Proceedings
Conference Proceedings
36. In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
Jikimoto, T. ; Tsuchida, H. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.709-712,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Technical Paper
Technical Paper
37. New Liquid Surface Conditioner for Low-Temperature Phosphating System Aimed at CO2 Emission Reduction.
Murai, Y. ; Izumi, K. ; Hidaka, T.
Pub. info.: 2010 SAE world congress : technical paper.  2010.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2010