1.

Conference Proceedings
Conference Proceedings
1. Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Nakao, M. ; likawa, H. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.373-378,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Development of SIC substrate with buried oxide layer for electron-photon merged devices
Nakao, M. ; Hirai, S. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.93-98,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
3.

Conference Proceedings
Conference Proceedings
3. Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for l6O+-implanted Si wafers
likawa, H. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.87-92,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
4.

Conference Proceedings
Conference Proceedings
4. Challenge to 200 mm 3C-SiC Wafers Using SOI
Nakao, M. ; Iikawa, H. ; Izumi, K. ; Yokoyama, T. ; Kobayashi, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.205-208,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
Hirai, S. ; Jobe, F. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.347-350,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
Hirai, S. ; Jobe, F. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.347-350,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393