1.

Conference Proceedings
Conference Proceedings
1. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.925-928,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
2.

Conference Proceedings
Conference Proceedings
2. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393