1.

Conference Proceedings
Conference Proceedings
1. Valence Force Field Analysis of Nitrogen in Silicon
Harada, H. ; Tanahashi, K. ; Koukitsu, A. ; Mikayama, T. ; Inoue, N.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.97-104,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
2.

Conference Proceedings
Conference Proceedings
2. Nucleation of Void Defects in Cz Silicon
Yamanaka, Y. ; Tanahashi, K. ; Mikayama, T. ; Inoue, N. ; Mon, A.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.77-85,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
3.

Conference Proceedings
Conference Proceedings
3. Point Defect Generation by the Stress Due to Impurity Doping in Silicon Crystal
Kikuchi, M. ; Tanahashi, K. ; Inoue, N.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.491-498,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
4.

Conference Proceedings
Conference Proceedings
4. Behavior of Point Defects in CZ Silicon Crystal Growth - Formation of Polyhedral Cavities and Oxidation-Induced Stacking Fault Nuclei
Tanahashi, K. ; Inoue, N. ; Mizokawa, Y.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.131-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442