1.

Conference Proceedings
Conference Proceedings
1. Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN)
Gotz, W. ; Johson, N.M. ; Bour, D.P. ; Chen, C. ; Liu, H. ; Imler, W.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.87-99,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
2.

Conference Proceedings
Conference Proceedings
2. Shallow and Deep Level Defects in GaN
Gotz, W. ; Johnson, N. M. ; Bour, D. P. ; Chen, C. ; Liu, H. ; Kuo, C. ; Imler, W.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.443-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395