1.

Conference Proceedings
Conference Proceedings
1. X-ray Standing Wave Investigations of Si Dopant Incorporation in GaN
Siebert, M. ; Schmidt, Th. ; Flege, J. I. ; Zegenhagen, J. ; Lee, T. -L. ; Figge, S. ; Hommel, D. ; Falta, J.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.35-42,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
2.

Conference Proceedings
Conference Proceedings
2. Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Kroger, R. ; Dennemarck, J. ; Bottcher, T. ; Figge, S. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.411-416,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
3.

Conference Proceedings
Conference Proceedings
3. Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05]
Paskova, T. ; Kroeger, R. ; Paskov, P.P. ; Figge, S. ; Hommel, D. ; Monemar, B. ; Haskell, B. ; Fini, P. ; Speck, J.S. ; Nakamura, S.
Pub. info.: Gallium Nitride Materials and Devices.  pp.612106-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121