1.

Conference Proceedings
Conference Proceedings
1. Localized Electrodeposition
Schindler, W. ; Hofmann, D. ; Kirschner, J.
Pub. info.: Scanning probe techniques for materials characterization at nanometer scale : proceedings of the International Symposium.  pp.12-15,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-35
2.

Conference Proceedings
Conference Proceedings
2. Characterization of bond performance of textiles in cement matrices using fiber optic sensors
Molter, M.I. ; Hegger, J. ; Habel, W.R. ; Hofmann, D. ; Gutmann, T. ; Basedau, F.
Pub. info.: Smart structures and materials 2002 : smart sensor technology and measurement systems : 18-19 March 2002, San Diego, USA.  pp.253-258,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4694
3.

Conference Proceedings
Conference Proceedings
3. Strain monitoring of a newly developed precast concrete track for high speed railway traffic using embedded fiber optic sensors
Crail, S. ; Reichel, D. ; Schreiner, U. ; Lindner, E. ; Habel, W.R. ; Hofmann, D. ; Basedau, F. ; Brandes, K. ; Barner, A. ; Ecke, W. ; Schroeder, K.
Pub. info.: Smart structures and materials 2002 : smart sensor technology and measurement systems : 18-19 March 2002, San Diego, USA.  pp.259-264,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4694
4.

Conference Proceedings
Conference Proceedings
4. Complex measurement system for long-term monitoring of prestressed railway bridges of the new Lehrter Bahnhof in Berlin
Habel, W.R. ; Hofmann, D. ; Kohlhoff, H. ; Knapp, J. ; Brandes, K. ; Haenichen, H. ; Inaudi, D.
Pub. info.: Smart structures and materials 2002 : smart sensor technology and measurement systems : 18-19 March 2002, San Diego, USA.  pp.236-241,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4694
5.

Conference Proceedings
Conference Proceedings
5. Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
Hofmann, D. ; Eckstein, R. ; Kadinski, L. ; Kolbl, M. ; Muller, M. ; Muller, St. G. ; Schmitt, E. ; Weber, A. ; Winnacker, A.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
6.

Conference Proceedings
Conference Proceedings
6. Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Eckstein, R. ; Hofmann, D. ; Makarov, Y. ; Muller, St. G. ; Pensl, G. ; Schmitt, E. ; Winnacker, A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.215-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
7.

Conference Proceedings
Conference Proceedings
7. Thermoelectric Transport Properties of ReSi1.75 Thin Films
Kleint, C. A. ; Heinrich, A. ; Griessmann, H. ; Hofmann, D. ; Vinzelberg, H. ; Schumann, J. ; Schlaefer, D. ; Behr, G. ; Ivanenko, L.
Pub. info.: Thermoelectric materials, 1998--the next generation materials for small-scale refrigeration and power generation applications : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.165-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 545
8.

Conference Proceedings
Conference Proceedings
8. Lightning-safe diaphragm pressure gauge tor geotechnical applications using a long-term reliable absolute EFPI sensor
Hofmann, D. ; Basedau, F. ; Habel, W. R. ; Gloetzl, R.
Pub. info.: Second European Workshop on Optical Fibre Sensors : EWOFS '04 : 9-11 June 2004, Santander, Spain.  pp.128-131,  2004.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5502
9.

Conference Proceedings
Conference Proceedings
9. Geotechnical pressure cell using a long-term reliable high-precision fiber optic sensor head
Gloetzl, R. ; Hofmann, D. ; Basedau, F. ; Habel, W.
Pub. info.: Smart structures and materials 2005 : Smart sensor technology and measurement systems : 7-9 March 2005, San Diego, California, USA.  pp.248-253,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5758
10.

Conference Proceedings
Conference Proceedings
10. Comparison of strain sensitivity of bare and structure-integrated fiber Bragg gratings
Lebid, S.Y. ; Hofmann, D. ; Basedau, F. ; Daum, W.
Pub. info.: Photonics, devices, and systems II :Proceedings from PHOTONICS PRAGUE 2002, 26-29 May 2002, Prague, Czech Republic, Miroslav Hrabovský, Dagmar Senderáková, Pavel Tománek, chairs/editors ; Organized by CSSF--Czech and Slovak Society for Photonics, Tech-Market.  pp.366-371,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5036
11.

Conference Proceedings
Conference Proceedings
11. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
12.

Conference Proceedings
Conference Proceedings
12. Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Epelbaum, B. M. ; Hofmann, D. ; Muller, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.107-110,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
13.

Conference Proceedings
Conference Proceedings
13. Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
Muller, St. G. ; Fricke, J. ; Hofmann, D. ; Horn, R. ; Nilsson, O. ; Rexer, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.43-46,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
14.

Conference Proceedings
Conference Proceedings
14. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
15.

Conference Proceedings
Conference Proceedings
15. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
16.

Conference Proceedings
Conference Proceedings
16. Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
Selder, M. ; Kadinski, L. ; Durst, F. ; Straubinger, T. L. ; Hofmann, D. ; Wellmann, P. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.31-34,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
17.

Conference Proceedings
Conference Proceedings
17. Hollow Defect Elimination During Solution Growth of SiC
Epelbaum, B. M. ; Hofmann, D. ; Mueller, M. ; Winnacker, A.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
18.

Conference Proceedings
Conference Proceedings
18. Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Hofmann, D. ; Bickermann, M. ; Hartung, W. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.445-448,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
19.

Conference Proceedings
Conference Proceedings
19. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
Epelbaum, B.M. ; Hofmann, D. ; Hecht, U. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.307-310,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
22.

Conference Proceedings
Conference Proceedings
22. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC
Muller, St. G. ; Hofmann, D. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.275-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
24.

Conference Proceedings
Conference Proceedings
24. On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging
Wellmann, P. J. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.259-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
25.

Conference Proceedings
Conference Proceedings
25. The As-Grown Microtopologies of Modified-Lely SiC(0001) Terraced Vicinal Surfaces
Marek, T. ; Heindl, J. ; Strunk, H. P. ; Eckstein, R. ; Muller, St. G. ; Hofmann, D.
Pub. info.: Structure and evolution of surfaces : symposium held December 2-5, 1996, Boston, Massachusette, U.S.A..  pp.145-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 440
26.

Conference Proceedings
Conference Proceedings
26. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
27.

Conference Proceedings
Conference Proceedings
27. Nanostructure of Free Volume in Glassy Polymers as Studied by Probe Methods and Computer Simulation.
Yampolskii, Yu. ; Shantarovich, V. ; Hofmann, D. ; Heuchel, M.
Pub. info.: Advanced materials for membrane separations.  pp.91-105,  2004.  Washington, D.C..  American Chemical Society
Title of ser.: ACS symposium series
Ser. no.: 876
28.

Conference Proceedings
Conference Proceedings
28. Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Wellmann, P.J. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.11-14,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
29.

Conference Proceedings
Conference Proceedings
29. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Stability Criteria for 4H-SiC Bulk Growth
Straubinger, T.L. ; Bickermann, M. ; Hofmann, D. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.25-28,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
31.

Conference Proceedings
Conference Proceedings
31. Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.49-52,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
32.

Conference Proceedings
Conference Proceedings
32. Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
Selder, M. ; Kadinski, L. ; Durst, F. ; Straubinger, T.L. ; Wellmann, P.J. ; Hofmann, D.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.65-68,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
33.

Conference Proceedings
Conference Proceedings
33. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.51-54,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
36.

Conference Proceedings
Conference Proceedings
36. Contact layer printing using alternating phase-shifting masks: mask making, patterning results, and production implementation
Pforr, R. ; Dettmann, W. ; Eisenhut, M. ; Hennig, M. ; Hofmann, D. ; Thiele, J. ; Thielscher, G.
Pub. info.: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents.  pp.178-187,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5504
37.

Conference Proceedings
Conference Proceedings
37. Lithography rework reduction and improved process control using AIM targets on aluminum layers in the high-volume production of 110-nm DRAM devices [6152-86]
Hofmann, D. ; Rabe, F ; Avrahamov, Y ; Sparka, C
Pub. info.: Metrology, Inspection, and Process Control for Microlithography XX.  pp.61522B-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6152