1.

Conference Proceedings
Conference Proceedings
1. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Hofmann, D. ; Bickermann, M. ; Hartung, W. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.445-448,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging
Wellmann, P. J. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.259-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
9.

Conference Proceedings
Conference Proceedings
9. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393