1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
3.

Conference Proceedings
Conference Proceedings
3. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
4.

Conference Proceedings
Conference Proceedings
4. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
5.

Conference Proceedings
Conference Proceedings
5. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
6.

Conference Proceedings
Conference Proceedings
6. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
7.

Conference Proceedings
Conference Proceedings
7. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
8.

Conference Proceedings
Conference Proceedings
8. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
9.

Conference Proceedings
Conference Proceedings
9. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573