Harrison, H.B. ; Johnson, S.T. ; Komem, Y. ; Wong, C. ; Cohen, S.
Pub. info.:
Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.455-458, 1986. Pittsburgh, Pa.. Materials Research Society
Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA. pp.787-792, 1985. Pittsburgh, Pa.. Materials Research Society
Harrison, H.B. ; Li, Y.H. ; Sai-Halasz, G.A. ; Iyer, S.
Pub. info.:
Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.223-228, 1986. Pittsburgh, Pa.. Materials Research Society
Harrison, H.B. ; Grigg, M. ; Short, K.T. ; Williams, J.S. ; Zylewicz, A.
Pub. info.:
Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.771-776, 1982. New York. North Holland
Grain boundaries in semiconductors : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.317-323, 1982. New York. North-Holland
Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.209-222, 1981. New York. North Holland
Device and process technologies for MEMS, microelectronics, and photonics III : 10-12 December 2003, Perth, Australia. pp.26-35, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Harrison, H.B. ; Li, H.F. ; Dimitrijev, S. ; Tanner, P.
Pub. info.:
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.505-519, 1997. Pennington, New Jersey. Electrochemical Society
Yao, Z.-Q. ; Ghodsi, R. ; Harrison, H.B. ; Dimitrijev, S. ; Yeow, T.Y.
Pub. info.:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface. pp.687-694, 1996. Pennington, NJ. Electrochemical Society