1.

Conference Proceedings
Conference Proceedings
1. SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.61-66,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Sarney, W. ; Chang, H.-R. ; Storasta, L. ; Jacobson, H. ; Reitmeier, Z.J. ; Wagner, B.P. ; Janzen, E. ; Davis, R.F.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.53-58,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
3.

Conference Proceedings
Conference Proceedings
3. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Doping-Related Strain in n-Doped 4H-SiC Crystals
Jacobson, H. ; Birch, J. ; Lindefelt, U. ; Hallin, C. ; Henry, A. ; Yakimova, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.269-272,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Storasta, L. ; Jacobson, H. ; Wagner, B.P. ; Reitmeier, Z.J. ; Janzen, E. ; Davis, R.F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.221-224,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Sundqvist, B. ; Ellison, A. ; Jonsson, A. ; Henry, A. ; Hallin, C. ; Bergman, J.P. ; Magnusson, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.21-24,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436