1.

Conference Proceedings
Conference Proceedings
1. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
Lendenmann, H. ; Bergman, J.P. ; Dahlquist, F. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.901-906,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393