1.

Conference Proceedings
Conference Proceedings
1. Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks
H. Watanabe ; S. Yoshida ; Y. Kita ; T. Hosoi ; T. Shimura
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.27-38,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers
T. Shimura ; M. Shimizu ; S. Horiuchi ; H. Watanabe ; K. Yasutake
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.1033-1037,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures
A. Chanthaphan ; Y.H. Cheng ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.627-630,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Ordered Structure in the Thermal Oxide Layer on Silicon Substrates
T. Shimura ; E. Mishima ; H. Watanabe ; K. Yasutake ; M. Umeno ; K. Tatsumura ; T. Watanabe ; I. Olidomari ; K. Yamada ; S. Kamiyama ; Y. Akasaka ; Y. Nara ; K. Nakamura
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.39-48,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
5.

Conference Proceedings
Conference Proceedings
5. Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
A. Chanthaphan ; Y. Katsu ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.340-343,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties
T. Hosoi ; D. Nagai ; M. Sometani ; T. Shimura ; M. Takei ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.323-326,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
7.

Conference Proceedings
Conference Proceedings
7. Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks
H. Watanabe ; S. Horie ; H. Arimura ; N. Kitano ; T. Minami ; M. Kosuda ; T. Shimura ; K. Yasutake
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.71-86,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)