1.

Conference Proceedings
Conference Proceedings
1. Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks
H. Watanabe ; S. Yoshida ; Y. Kita ; T. Hosoi ; T. Shimura
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.27-38,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
H. Watanabe ; T. Hosoi ; T. Kirino ; Y. Uenishi ; A. Chanthaphan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.697-702,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures
A. Chanthaphan ; Y.H. Cheng ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.627-630,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices
K. Ohmori ; T. Chikyow ; T. Hosoi ; H. Watanabe ; K. Nakajima
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.201-207,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
5.

Conference Proceedings
Conference Proceedings
5. Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
A. Chanthaphan ; Y. Katsu ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.340-343,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties
T. Hosoi ; D. Nagai ; M. Sometani ; T. Shimura ; M. Takei ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.323-326,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897